ABB 5SHY4045L0006 3BHB030310R0001 IGCT Semiconductor Diode

The Integrated Gate Commutated Thyristor is a power semiconductor switching device specifically developed for medium voltage converters.

Based on well established GTO (Gate Turn Off Thyristor) technology, it enables intrinsically less complex, more efficient and reliable converter designs.

IGCTs combine high speed switching capabilities as known from IGBTs (Insulated Gate Bipolar Transistors) with high blocking voltage and low 

conduction losses as known from GTOs.The IGCT combines the gate commutated thyristor together with the gate unit as integrated unit.

ABB 5SHY4045L0006 3BHB030310R0001 They are pressed with a relatively high force onto heat-sinks which also serve as electrical contacts to the power 

terminals.

The IGCT's turn-on/off control unit is an integral element of the component. It only requires an external power supply and its control functions are 

conveniently accessed through optical fiber connections. The device's control power consumption typically ranges from 10 - 100 W.

The IGCT is optimized for low conduction losses. Its typical turn-on/off switching frequency is in the range of 500 hertz. However, in contrast to the GTO, 

the upper switching frequency is only limited by operating thermal losses and the system's ability to remove this heat. This feature, in conjunction with 

the device's fast transition between on and off state, enables short on-off pulse bursts with switching frequencies of up to 40 kHz.

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