ABB 3BHE039203R0101 GVC736CE101 Silicon controlled module IGCT high voltage control spare parts

Manufacturer：ABB 

Part number：3BHE039203R0101

Part No：GVC736CE101  

Product Description：Silicon controlled，IGCT Module

Worldwide shipping:DHL,UPS,Fedex,andTNT

IGCT module  5SHY4045L0006 3BHB030310R0001 In recent years, driven by new energy transmission and large-scale energy storage, the development of DC power networks in countries around the world is unstoppable. As the core components of key equipment for DC backbone networks such as MMC, DC circuit breakers, DC transformers and DC energy dissipation devices, high-voltage and large-capacity power semiconductor devices are the frontier topic of academic research and a hot spot of concern for industrial applications. with the advantages of small driving power and simple driving circuit, fast switching speed, high withstand voltage and high current, IGBTs have been widely used in flexible DC networks. In fact, despite the advantages of IGBTs, there are still problems such as high on-state voltage drop, low reliability and high manufacturing costs compared to current devices, and there is much room for improvement. Especially in high voltage and high capacity applications, where the number of switching devices used is very large, it would be very attractive and promising if these characteristics could be improved to further increase efficiency and reliability and reduce costs. 

With lower through-state voltage drop, higher reliability and lower manufacturing costs than IGBTs, as well as compactness and higher blocking voltage and through-current capability, IGCTs are expected to improve the performance and performance of IGBTs in high-voltage high-capacity applications. In fact, in flexible DC networks, key devices such as MMCs, DC transformers and DC circuit breakers have many new features compared to AC grid applications, such as the very low switching frequency of MMCs, the soft switching capability of DC transformers and the fact that DC circuit breakers only require a single operation. These features will to some extent weaken the technical weaknesses of IGCT such as slow switching speed, and bring great opportunities for the application of IGCT in flexible DC power networks. The scientific research team of the Department of Electrical Engineering of Tsinghua University and the DC Research Centre of the Energy Internet Research Institute has been working on the key technologies of IGCT physical mechanism model, parameter optimisation, performance regulation and new drive, combining the characteristics of key equipment of DC power networks since 2015, and has overcome the scientific and technical problems of IGCT DC power network application. The team has successfully developed a new generation of 4 500V/5 000A IGCT-Plus devices for DC networks, and has realized a number of DC network engineering applications.

XiongBa DianZi automation equi pment Co., Ltd.

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