AMAT/APPLIED MATERIALS 0010-23716 PMAX PYROMETER RTP.The 0010-23716 of AMAT is a PMAX pyrometer assembly specifically designed for Rapid Thermal Processing (RTP) in semiconductor manufacturing environments.
The AMAT 0010-23716 PMAX pyrometer rapid thermal processing equipment is mainly composed of a heating system, a temperature measurement and control system, etc., and its working principle is as follows:
Heating principle: The equipment usually generates heat through methods such as halogen lamps or graphite heating elements. When using halogen lamps for heating, the high-intensity radiant energy emitted by the filaments is utilized. Through optical systems such as mirrors, the heat is focused onto the wafer to achieve rapid heating up. As for the graphite heating element, Joule heat is generated when an electric current passes through the graphite, thereby heating the wafer. This heating method enables the wafer to reach a relatively high temperature within a short period, meeting the requirements of rapid thermal processing.
Temperature measurement principle: The PMAX pyrometer is the core temperature measurement component of the equipment, and it operates based on the principle of optical pyrometry. The pyrometer calculates the temperature of the wafer by measuring the thermal radiation emitted from the surface of the wafer. Specifically, it detects the intensity of infrared radiation within a specific wavelength range. According to Planck's law, there is a specific functional relationship between the intensity of thermal radiation and the temperature of an object. Through precise measurement and calculation of the radiation intensity, the temperature of the wafer surface can be obtained.
Temperature control principle: The control system in the equipment will conduct real-time comparison between the temperature data measured by the pyrometer and the preset temperature value. If the measured temperature is lower than the preset value, the control system will increase the heating power to raise the temperature of the wafer; conversely, if the measured temperature is higher than the preset value, the control system will reduce the heating power to ensure that the temperature of the wafer stabilizes near the preset target value. At the same time, in order to ensure the temperature uniformity on the wafer, the control system will also independently adjust the heating power of each area according to the temperature measurement data of different positions on the wafer. Through this closed-loop feedback control mechanism, precise control of the temperature during the rapid thermal processing of the wafer is achieved.
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