ABB 3BHE014105R0001 5SXE08-0166 thyristor module

Part number:3BHE014105R0001

Part No:5SXE08-0166

Manufacturer:ABB

Product Description:IGBT module

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Contact：Lily

QQ：3005319639

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Landline：05922350124

E-mail: plcdcs-module@foxmail.com

The expansion of power electronics into new fields of energy management and renewable energy sources is driving the need for higher voltage, more performance and higher efficiency semiconductors, while increasing demands for reliability and lower costs. 

The IGCT is capable of still higher currents and voltages without series or parallel connection. The first such products are introduced as Generation 3 or HPT+ “High power technology” devices. Improvements have been done at gate contact infrastructure, what was moved to the device periphery. This measure improves the switching performance thanks to a lower gate circuit impedance. The latest family of IGCTs exhibit up to 30 percent higher turn-off capability compared to previous generation devices. By applying an outer gate ring structure, the use of a monolithic cathode side molly was possible. This allows for a more efficient and homogeneous wafer cooling on the cathode side compared to previous IGCT generation. By applying an asymmetric anode and cathode side pole piece the total thermal impedance was lowered. The result is a device with improved thermal performance and increased reliability

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