ABB 5SHY35L4510 3BHE014105R0001 Asymmetric Integrated Gate- Commutated Thyristor
Part | 5SHY35L4510 |
---|---|
Description | Asymmetric Integrated Gate- Commutated Thyristor |
Feature | VDRM ITGQM ITSM V(T0) rT VDC-link = = = = = = 4500 4000 32×103 1. 4 0. 325 280 0 V A A V mΩ V Asymmetric Integrate d GateCommutated Thyristor 5SHY 35L451 0 Doc. No. 5SYA1232-02 June 07 • Hig h snubberless turn-off rating • Optim ized for medium frequency (<1 kHz) and wide temperature range • High reliabi lity • High electromagnetic immunity • Simple control interface with statu s feedback • AC or DC supply voltage • Contact factory for series connecti on www. DataSheet4U. com Blocking Maxim um rated values 1) Parameter Symbol C onditions Rep. peak off-state voltage V DRM Gate Unit energized Permane . |
Manufacture | ABB |
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