Application characteristics of ABB S-123H 3BHB030479R0112 PHASE MODULE
ABB S-123H 3BHB030479R0112 PHASE MODULE IGCT is made by introducing buffer layer, anode transparent emitter structure in gate
turn-off thyristor (gate turn-off thyristor, GTO) and integrating the gate driving circuit, so as to make IGCT not only have high current,
high fire voltage, low on-state voltage drop, but also have the advantages of high switching speed and high reliability. The maximum
switching current of IGCT products reaches 8kA.
Compared to IGBTs, the ABB S-123H 3BHB030479R0112 PHASE MODULE IGCT has a very high inrush current withstand speed,
and the 4-inch device can withstand sinusoidal transient currents of 30kA or more for 10ms. In terms of switching speed, both turn-on
and turn-off of the IGCT are slower than the IGBT In fact, for the IGCT 5SHY40L4511 and the crimp-type IGBT 5SNA1300K450300, if we
consider the turn-off voltage and current of 2800V/1300A, the turn-off voltage of the IGCT is about 5J, while that of the IGBT is about 6J,
so additionally, the turn-off voltage of the IGCT is about 5J when it is conduction 2kA current has a minimum on-state voltage drop of 1.5V
compared to 3.0V for the IGBT, and thus the IGCT on-state loss is also slightly lower.18 - 19 ]. However, since the IGBT is a voltage source type
device, the gate drive power is much lower than that of a constant IGCT.
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