5SHX1960L0006  ABB   3BHB016120R0002  Silicon controlled Module

Part number:  5SHX1960L0006

Part No:3BHB016120R0002

Manufacturer:ABB

Product Description: Silicon controlled Module

5SHX1960L0006 3BHB016120R0002 The IGCT integrated gate-commutated thyristor is a new type of power semiconductor switching device (integrated gate-commutated thyristor = gate-commutated thyristor + gating unit) developed for use in giant power electronics packages for medium-voltage inverters.

Presented by ABB in 1997, the IGCT enables variable current devices to make great progress in terms of power, reliability, switching speed, efficiency, cost, weight and size.

 IGCT is a GTO chip integrated with an anti-parallel diode and a gate driver circuit, and then connected to its gate driver in a low inductance way at the periphery, combining the advantages of stable turn-off capability of the transistor and low on-state losses of the thyristor in the on-state IGCTs are characterised by high current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-state losses, low cost and high yield rate. IGCT has been successfully used for 11 years (up to 2009) in medium voltage inverters. The high speed switching capability of IGCT eliminates the need for a buffer circuit, thus requiring fewer power components and greatly increasing operational reliability.

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