ABB 3BHE009681R0101 GVC750BE101 semiconductor module

ABB 3BHE009681R0101 GVC750BE101 is a semiconductor module, the specific parameters and characteristics can vary according to different models and specifications of the product. Generally speaking, semiconductor modules are an important part of power electronic devices, which are used to achieve the control, conversion and protection of electrical energy.

ABB 3BHE009681R0101 GVC750BE101 Thyristor from conduction to blocking, and switching circuit, as a result of line inductance (mainly transformer leakage LB) release energy will generate overvoltage. Since the thyristor is filled with carriers inside the component during conduction, there are still carriers remaining inside the component when the forward voltage drops to zero during the shutdown process. These accumulation of carriers in the reverse voltage under the role of a large instantaneous reverse current, so that the accumulation of carriers quickly disappeared, when the reverse current disappeared extremely fast, that is, di / dt great. Therefore, even if the inductance L of the line connected in series with the component is very small, the inductor generates an inductive potential L (di/dt) value is still very large, this potential and the supply voltage in series, reverse added to the component that has been restored to block, which may lead to the reverse breakdown of the thyristor. This overvoltage caused by the thyristor shutdown, known as the shutdown overvoltage, its value can reach 5 to 6 times the peak working voltage, so must be taken to inhibit measures.

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