ABB 5SXE12-0184 GVC736CE101 3BHE039203R0101 Integrated gate converter thyristor.5SXE12-0184 GVC736CE101 3BHE039203R0101 Integrated gate converter thyristor At the heart of medium- and high-voltage power system design, this IGCT offers outstanding electrical performance. It can stably withstand high voltages of thousands of volts, and maintains reliable blocking characteristics at voltage levels of 4.5kV and above, effectively guaranteeing the safe operation of power systems. Strong current carrying capacity should not be underestimated, sustained current up to hundreds of amperes, peak current handling ability is more prominent, can easily meet the needs of high-power application scenarios. Normal operation has a wide range of junction temperatures, with stable operation in the -40℃ to 125℃ temperature range.
Parameters:
1. Voltage level: usually able to withstand higher blocking voltage, suitable for medium and high voltage power electronic system, general blocking voltage can reach thousands of volts level.
2. Current capacity: it can handle larger currents, with a continuous current carrying capacity of several hundred amperes, and a higher peak current carrying capacity to meet the needs of high-power applications.
3. Switching frequency: IGCT has a certain switching speed, although compared with some high-frequency semiconductor device switching frequency is relatively low, but in the applicable high-voltage, high-power scenarios, the switching frequency can be generally in the range of tens of hundreds of Hz.
4. On-state voltage drop: In the on-state, the IGCT will generate a certain on-state voltage drop, which will affect its power loss.
5. Gate Drive Parameters: A specific gate drive voltage and current are required to achieve its conduction and shutdown control. The gate drive voltage has a specific amplitude requirement, and the gate drive current also has a corresponding specification limit to ensure reliable switching action.
6. di/dt (rate of change of current) and dv/dt (rate of change of voltage) withstand ability: in the switching process, the IGCT is able to withstand a certain rate of change of current (di/dt) and rate of change of voltage (dv/dt), which is very important for the reliable operation in the actual circuit.
7. Thermal parameters: including junction temperature range, thermal resistance and other parameters, thermal resistance determines the device's ability to work in the heat dissipation and temperature rise, to ensure the reliability and life of the device is critical.
ABB 5SXE12-0184 GVC736CE101 3BHE039203R0101 Integrated gate converter thyristor
ABB 5SXE12-0184 GVC736CE101 3BHE039203R0101 Integrated gate converter thyristor
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