ABB 3BHB018162R0001 5SHY4045L0001 Driving device IGCT thyristor

5SHY4045L0001 3BHB018162R0001 Integrated Gate Commutated Thyristor IGCT (Intergrated Gate Commutated Thyristors) is a new type of power semiconductor device used in giant power electronic complete sets introduced in 1996.

IGCT is a new type of high power semiconductor switching device based on GTO structure, using integrated gate structure for gate hard drive, buffer layer structure and anode transparent emitter technology, with the on-state characteristics of thyristor and the switching characteristics of transistor.(

Same series models:5SHY3545L0009、5SHY3545L0014)

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5SHY4045L0001 3BHB018162R0001 Due to the use of buffer structure and shallow emitter technology, thus reducing the dynamic loss of about 50 per cent, in addition, this type of device is also integrated in a chip with good dynamic characteristics of the continuity diode, so that its unique way to achieve the thyristor's low pass-state voltage drop, high blocking voltage and transistor stable switching characteristics of the organic combination.

Main brands include: 

ABB, Bailey, GE, FOXBORO, Invensys TRICONEX,BENTLY, A-B,Rockwell, EMERSON EMERSON, B&R, MOTOROLA, FUANC, REXROTH, KUKA, HONEYWELL, NI, DEIF, Yokogawa, WOODWARD WOODWARD, Ryan, SCHNEIDER SCHNEIDER, Yaskawa, MOOG, EPRO, PROSOFT and other major brands

Application areas：

The main application industries are: chemical, automotive, thermal power, steel, plastic, wind power,power plant, paper, steel, mine, rubber, water supply, cement, chemical, glass, printing textile, machinery, plastic, paint, medicine, hospital, food, hotel, scientific research institute, etc.

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